The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Jul. 16, 2020
University of Florida Research Foundation, Incorporated, Gainesville, FL (US);
Shuo Wang, Gainesville, FL (US);
Boyi Zhang, Gainesville, FL (US);
University of Florida Research Foundation, Incorporated, Gainesville, FL (US);
Abstract
Methods and apparatus for reducing Miller effect in SiC MOSFETs are provided. An example apparatus includes a plurality of SiC MOSFETs and a Miller current cancellation circuit configured to mitigate Miller current induced by switching transients associated with the plurality of SiC MOSFETS. The Miller current cancellation circuit includes a two-stage voltage sampling circuit configured to sample a drain to source voltage of a SiC MOSFET of the plurality of SiC MOSFETs, a voltage inverting circuit configured to invert the sampled drain to source voltage, and an injection capacitor configured to generate, by way of receiving the inverted sampled drain to source voltage as input, inverse Miller current to mitigate the Miller current within the plurality of SiC MOSFETS.