The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2021

Filed:

Sep. 10, 2018
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventors:

Mari Saji, Nagaokakyo, JP;

Junpei Yasuda, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 9/64 (2006.01); H03H 9/72 (2006.01); H03H 9/145 (2006.01); H03H 9/02 (2006.01); H03H 9/25 (2006.01); H01L 41/047 (2006.01); H01Q 1/50 (2006.01); H03H 7/38 (2006.01);
U.S. Cl.
CPC ...
H03H 9/6406 (2013.01); H03H 9/02559 (2013.01); H03H 9/02637 (2013.01); H03H 9/02834 (2013.01); H03H 9/145 (2013.01); H03H 9/14541 (2013.01); H03H 9/25 (2013.01); H03H 9/6436 (2013.01); H03H 9/6483 (2013.01); H03H 9/725 (2013.01); H01L 41/0477 (2013.01); H01Q 1/50 (2013.01); H03H 7/38 (2013.01);
Abstract

A composite filter device includes an antenna common terminal, a first band pass filter having a first pass band, and a second band pass filter having a second pass band located at higher frequencies than the first pass band. The first band pass filter includes an elastic wave resonator. The elastic wave resonator includes a LiNbOsubstrate, an IDT electrode on the LiNbOsubstrate, and a dielectric film that covers the IDT electrode and includes a silicon oxide as a main component. When f' is the frequency of a Sezawa wave of the first band pass filter and fis the center frequency of the second pass band, f′ is located at a different position from f


Find Patent Forward Citations

Loading…