The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Jun. 17, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Philip Hsin-Hua Li, Danville, CA (US);
Seshadri Ramaswami, Saratoga, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods and apparatus form a photon absorber layer of a photodiode with characteristics conducive to applications such as, but not limited to, image sensors and the like. The absorber layer uses a copper-indium-gallium-selenium (CIGS) material with a gallium mole fraction of approximately 35% to approximately 70% to control the absorbed wavelengths while reducing dark current. Deposition temperatures of the absorber layer are controlled to less than approximately 400 degrees Celsius to produce sub-micron grain sizes. The absorber layer is doped with antimony at a temperature of less than approximately 400 degrees Celsius to increase the absorption.