The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11088290 B1

Date of Patent:

Aug. 10, 2021

Filed:

Jan. 27, 2020

Semiconductor apparatus

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Takahiro Tamura, Matsumoto, JP;

Yuichi Onozawa, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:

Primary Examiner:

Shahed Ahmed

Int. Cl.

CPC ...

H01L 29/861 (2006.01); H01L 27/07 (2006.01); H01L 29/06 (2006.01); H01L 29/36 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01);

U.S. Cl.

CPC ...

H01L 29/861 (2013.01); H01L 27/0716 (2013.01); H01L 29/0623 (2013.01); H01L 29/0684 (2013.01); H01L 29/36 (2013.01); H01L 29/417 (2013.01); H01L 29/7396 (2013.01);

Abstract

Provided is a semiconductor apparatus in which the buried region includes an end portion buried region continuously disposed from a region below the contact opening up to a region below the interlayer dielectric film while passing below an end portion of the contact opening in a cross section perpendicular to the upper surface of the semiconductor substrate, and the end portion buried region disposed below the interlayer dielectric film is shorter than the end portion buried region disposed below the contact opening in a first direction in parallel with the upper surface of the semiconductor substrate.

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