The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Dec. 30, 2018
Xiamen Sanan Integrated Circuit Co., Ltd., Xiamen, CN;
XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD. ., Xiamen, CN;
Abstract
A microwave transistor has a patterned region between a source and a drain on a barrier layer. Within the patterned region, the surface of the barrier layer partially recessed downwards in the thickness direction to form a plurality of grooves. A gate covers the patterned region. The length of the gate is greater than the lengths of the grooves in the length direction of the gate, so as to completely cover the grooves. In one aspect, by arranging the grooves, the gate control capability of a component is improved and the short-channel effect is suppressed; in another aspect, an original heterostructure below the gate is preserved; in this way, the reduction of the conductive capability due to the reduction of the two-dimensional electron gas density is avoided; and accordingly the current output capability of the component is ensured while the short-channel effect is suppressed.