The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Mar. 03, 2020
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Daimotsu Kato, Kawasaki, JP;
Yosuke Kajiwara, Yokohama, JP;
Akira Mukai, Kawasaki, JP;
Aya Shindome, Yokohama, JP;
Hiroshi Ono, Setagaya, JP;
Masahiko Kuraguchi, Yokohama, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first nitride region, a second nitride region, and a first insulating film. The first nitride region includes AlGaN. The first nitride region includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The second nitride region includes AlGaN. The second nitride region includes sixth and seventh partial regions. The first insulating film includes a first insulating region and is between the third partial region and the third electrode. The third partial region has a first surface opposing the first insulating region. The fourth partial region has a second surface opposing the sixth partial region.