The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Feb. 26, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Wei-E Wang, Austin, TX (US);
Mark S. Rodder, Dallas, TX (US);
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/8238 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/161 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 21/28 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 21/28088 (2013.01); H01L 21/28158 (2013.01); H01L 21/823807 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 27/0922 (2013.01); H01L 29/045 (2013.01); H01L 29/0649 (2013.01); H01L 29/0673 (2013.01); H01L 29/161 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/78696 (2013.01);
Abstract
A field-effect transistor (FET) device having a modulated threshold voltage (Vt) includes a source electrode, a drain electrode, a channel region extending between the source electrode and the drain electrode, and a gate stack on the channel region. The gate stack includes an ultrathin dielectric dipole layer on the channel region configured to shift the modulated Vt in a first direction, a high-k (HK) insulating layer on the ultrathin dielectric dipole layer, and a doped gate metal layer on the HK insulating layer configured to shift the modulated Vt in a second direction.