The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2021

Filed:

Oct. 20, 2017
Applicant:

Xiamen Tianma Micro-electronics Co., Ltd., Xiamen, CN;

Inventor:

Liang Wen, Xiamen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); G09G 3/36 (2006.01); G09G 3/20 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G09G 3/2092 (2013.01); G09G 3/3648 (2013.01); H01L 27/1251 (2013.01); H01L 27/1274 (2013.01); H01L 29/42384 (2013.01); H01L 29/78633 (2013.01); H01L 29/78648 (2013.01); H01L 29/78672 (2013.01); H01L 29/78675 (2013.01); G09G 3/3688 (2013.01); G09G 2300/0417 (2013.01); G09G 2310/0291 (2013.01); G09G 2310/0297 (2013.01); G09G 2320/0214 (2013.01); G09G 2330/023 (2013.01); H01L 21/31116 (2013.01); H01L 29/78621 (2013.01); H01L 2029/42388 (2013.01);
Abstract

The disclosure discloses a display panel, a method for driving the same, and a display device, where a control electrode is arranged on the side of an active layer of a thin film transistor away from a gate electrode, and the thickness of a buffer layer between the control electrode and the active layer is controlled so that the buffer layer is thicker than a gate insulation layer between the gate electrode and the active layer, to adjust the distance between the control electrode and the active layer to be larger than the distance between the gate electrode and the active layer; and at least when a gate off voltage is applied to the gate electrode so that the thin film transistor is switched off, a first control voltage is applied to the control electrode to vary a voltage Vg of the thin film transistor.


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