The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2021

Filed:

Jun. 24, 2019
Applicant:

Microchip Technology Incorporated, Chandler, AZ (US);

Inventor:

Paul Fest, Chandler, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76895 (2013.01); H01L 21/31144 (2013.01); H01L 21/76834 (2013.01); H01L 28/20 (2013.01);
Abstract

A method is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) including IC elements, e.g., memory components. A first contact etch stop layer is formed over the IC elements. A TFR layer stack including a TFR etch stop layer, a TFR film layer, and a second contact etch stop layer is formed over the first contact etch stop layer, and in some cases over one or more pre-metal dielectric layers. A patterned mask is formed over the IC stack, and the stack is etched, through both the first and second contact etch stop layers, to simultaneously form (a) first contact openings exposing contact regions of the IC elements and (b) second contact opening(s) exposing the TFR film layer. The first and second contact openings are filled with conductive material to form conductive contacts to the IC elements and the TFR film layer.


Find Patent Forward Citations

Loading…