The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Oct. 08, 2019
Applicant:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Inventors:
Stephen R. Forrest, Ann Arbor, MI (US);
Kyusang Lee, Ann Arbor, MI (US);
Assignee:
THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Ann Arbor, MI (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/78 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02463 (2013.01); H01L 21/02389 (2013.01); H01L 21/02392 (2013.01); H01L 21/02395 (2013.01); H01L 21/02461 (2013.01); H01L 21/02505 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02664 (2013.01); H01L 21/324 (2013.01); H01L 21/7813 (2013.01); H01L 21/67023 (2013.01); H01L 2224/8001 (2013.01); H01L 2224/80894 (2013.01); H01L 2224/82948 (2013.01);
Abstract
A method is presented for fabricating a substrate comprised of a compound semiconductor. The method includes: growing a sacrificial layer onto a parent substrate; growing an epitaxial template layer on the sacrificial layer; removing the template layer from the parent substrate using an epitaxial lift-off procedure; and bonding the removed template layer to a host substrate using Van der Waals forces and thereby forming a compound semiconductor substrate.