The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2021

Filed:

Jan. 10, 2020
Applicants:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Frédéric Voiron, Barraux, FR;

Julien El Sabahy, Grenoble, FR;

Guy Parat, Claix, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D 11/02 (2006.01); H01G 4/33 (2006.01); G01N 27/22 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 25/16 (2006.01); H01L 49/02 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01G 4/33 (2013.01); C25D 11/02 (2013.01); G01N 27/227 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 23/49811 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 25/16 (2013.01); H01L 28/90 (2013.01); H01L 24/16 (2013.01); H01L 2224/16225 (2013.01);
Abstract

A substrate that includes a base layer having a first principal surface defining a plurality of first trenches and intervening first lands, and a cover layer provided over the first principal surface of the base layer and covering the first trenches and first lands substantially conformally, wherein the surface of the cover layer remote from the first principal surface of the base layer comprises a plurality of second trenches and intervening second lands defined at a smaller scale than the first trenches and first lands. The substrate may be used to fabricate a capacitive element in which thin film layers are provided and conformally cover the second trenches and second lands of the cover layer, to create a metal-insulator-metal structure having high capacitance density.


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