The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2021

Filed:

Feb. 27, 2020
Applicant:

Lapis Semiconductor Co., Ltd., Yokohama, JP;

Inventor:

Takashi Yamada, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01); G11C 11/408 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 7/1045 (2013.01); G11C 11/4085 (2013.01); G11C 11/4087 (2013.01); G11C 11/4094 (2013.01);
Abstract

In writing and reading data at a semiconductor storage device, control is carried out such that, at a time of a burst mode, in a case in which a value of a block address which is, from addresses assigned to a region of an internal address, an address for selecting a sense amplifier block from plural sense amplifier blocks, is a largest value, a first sense amplifier block and a second sense amplifier block are made to access different banks, and, in case in which the value of the block address is not the largest value, the first sense amplifier block and the second sense amplifier block are made to access a same bank of plural banks.


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