The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
May. 28, 2020
International Business Machines Corporation, Armonk, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
An analog Magnetoresistive Random Access Memory (MRAM) cell is provided. The analog MRAM cell includes a magnetic free layer having a first domain having a first magnetization direction, a second domain having a second magnetization direction opposite to the first magnetization direction and a domain wall located between the first domain and the second domain. The analog MRAM cell further includes a magnetically pinned layer. The analog MRAM cell also includes an insulating tunnel barrier between the magnetic free layer and the magnetically pinned layer. The analog MRAM cell additionally includes an electrode located adjacent to the magnetic free layer configured to generate heat by supplying current to decrease a conductance of the magnetic free layer.