Leakage distribution estimation system and method of semiconductor device

Abstract

A semiconductor device includes a leakage distribution estimation system. The system includes: a parameter sampling unit suitable for selecting sample values for parameters, which are changed according to a process variation of the semiconductor device; a data transformation unit suitable for transforming the sample values selected by the parameter sampling unit into Gaussian sample values; a leakage data generation unit suitable for generating leakage data of the semiconductor device by performing a leakage simulation using node bias information on switching elements included in the semiconductor device, information extracted for leakage components of the switching elements, and the Gaussian sample values; and a Gaussian mixed model (GMM) modeling unit suitable for clustering the leakage data into a plurality of clusters, generating Gaussian components corresponding to the respective clusters using the leakage data of the clusters and mixing the Gaussian components thereby to determine a leakage distribution of the semiconductor device.