The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
May. 21, 2018
Applicant:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/30 (2020.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); G06F 30/367 (2020.01); G06F 111/10 (2020.01);
U.S. Cl.
CPC ...
G06F 30/30 (2020.01); G06F 30/367 (2020.01); H01L 23/528 (2013.01); H01L 23/53204 (2013.01); G06F 2111/10 (2020.01);
Abstract
A method for characterizing a material for use in a semiconductor device and the semiconductor device using the material are described. The material has a unit cell and a crystal structure. The method includes determining a figure of merit (FOM) for the material using only forward conducting modes for the unit cell. The FOM is a resistivity multiplied by a mean free path. The FOM may be used to determine a suitability of the material for use in the semiconductor device.