The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2021

Filed:

Sep. 03, 2019
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Nan Jin, Yokohama Kanagawa, JP;

Ryoichi Kato, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0659 (2013.01); G06F 3/0604 (2013.01); G06F 3/068 (2013.01); G06F 3/0656 (2013.01);
Abstract

According to one embodiment, a memory system includes a volatile memory, a nonvolatile memory and a controller circuit. The controller circuit configured to control the volatile memory and the nonvolatile memory and to perform a write process and a non-volatilization process. The controller circuit is further configured to, during the write process, store write data in the volatile memory, and during the non-volatilization process, upon determining that data size stored in the write buffer being less than unit of writing of the nonvolatile memory, suspend completion of the non-volatilization process and not return a notification of completion of the non-volatilization process.


Find Patent Forward Citations

Jin, Nan. (2021). Memory system for writing fractional data into nonvolatile memory (U.S. Patent No. 11086568). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11086568

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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