The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2021

Filed:

Jun. 03, 2016
Applicant:

Centre National DE LA Recherche Scientifique, Paris, FR;

Inventors:

Stéphane Vezian, Valbonne, FR;

Benjamin Damilano, Nice, FR;

Julien Brault, Antibes, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 33/02 (2006.01); C30B 29/40 (2006.01); C30B 29/60 (2006.01); H01L 29/22 (2006.01); B82Y 40/00 (2011.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 33/02 (2013.01); C30B 29/406 (2013.01); C30B 29/60 (2013.01); H01L 29/22 (2013.01); B82Y 40/00 (2013.01); C30B 29/06 (2013.01);
Abstract

A method for producing at least one type of nanostructures comprises the following steps: partially covering a surface of a single-crystal layer or multilayer structure with a discontinuous mask, forming discrete islets having at least one submicrometric lateral dimension and made of a material having an evaporation temperature above that of the layer or multilayer structure; and heating the layer or multilayer structure under vacuum to a so-called etching temperature, above the evaporation temperature of the layer or multilayer structure but below that of the mask, so as to cause evaporation of the layer or multilayer structure outside of the regions covered by the mask. Structures that may be produced by such a method are also provided.


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