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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11084011 B1

PDFFull Text
Date of Patent:
Aug. 10, 2021

Filed:

Nov. 30, 2018

Annealing method and nitrogen-doped metal oxide structure

Applicant:

Industry-university Cooperation Foundation Hanyang University Erica Campus, Ansan-si, KR;

Inventors:

Jin Ho Bang, Ansan-si, KR;

Sang Uck Lee, Bucheon-si, KR;

Lanlee Lee, Ansan-si, KR;

Suyoung Han, Ansan-si, KR;

Byung Wuk Kang, Anyang-si, KR;

Heeeun Kim, Daegu, KR;

Assignee:

INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS, Ansan-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Matthew R Diaz

Int. Cl.
CPC ...
B01J 6/00 (2006.01); C01G 51/04 (2006.01); C01G 55/00 (2006.01); H01B 1/08 (2006.01); H01M 4/525 (2010.01); C01G 39/02 (2006.01); C01G 35/00 (2006.01); C01G 31/02 (2006.01); C01G 33/00 (2006.01); C01G 41/02 (2006.01); C01G 49/06 (2006.01); C01G 23/08 (2006.01); H01B 1/06 (2006.01); H01M 4/02 (2006.01); H01M 10/0525 (2010.01); H01M 10/052 (2010.01); H01M 4/48 (2010.01); H01M 4/52 (2010.01);
U.S. Cl.
CPC ...
B01J 6/00 (2013.01); C01G 23/08 (2013.01); C01G 31/02 (2013.01); C01G 33/00 (2013.01); C01G 35/00 (2013.01); C01G 39/02 (2013.01); C01G 41/02 (2013.01); C01G 49/06 (2013.01); C01G 51/04 (2013.01); C01G 55/004 (2013.01); H01B 1/06 (2013.01); H01B 1/08 (2013.01); H01M 4/525 (2013.01); C01P 2002/54 (2013.01); C01P 2002/70 (2013.01); C01P 2002/72 (2013.01); C01P 2002/77 (2013.01); C01P 2002/85 (2013.01); C01P 2004/03 (2013.01); C01P 2004/04 (2013.01); C01P 2004/64 (2013.01); C01P 2006/12 (2013.01); C01P 2006/14 (2013.01); C01P 2006/40 (2013.01); H01M 4/483 (2013.01); H01M 4/523 (2013.01); H01M 10/052 (2013.01); H01M 10/0525 (2013.01); H01M 2004/028 (2013.01);
Abstract

An annealing method is provided. The annealing method includes preparing a metal oxide structure, annealing the metal oxide structure in a gas atmosphere including nitrogen to fabricate a metal compound structure, an oxygen content of which is lower than that of the metal oxide structure, from the metal oxide structure, and annealing the metal compound structure in a gas atmosphere including oxygen to fabricate a nitrogen-doped metal oxide structure, which has a specific surface area greater than that of the metal oxide structure, from the metal compound structure.

Find Patent Forward Citations

Bang, Jin. (2021). Annealing method and nitrogen-doped metal oxide structure (U.S. Patent No. 11084011). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11084011

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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