The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Jan. 21, 2020
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ashim Dutta, Menands, NY (US);
Saba Zare, Albany, NY (US);
Michael Rizzolo, Delmar, NY (US);
Theodorus E. Standaert, Clifton Park, NY (US);
Daniel C. Edelstein, White Plains, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 27/222 (2013.01);
Abstract
Form a metallized layer at a top surface of a semiconductor wafer. The metallized layer includes a bottom contact and a dielectric barrier surrounding the bottom contact. Deposit a memory stack layer onto the metallized layer. The memory stack layer forms a first overspill on a bevel of the wafer. Remove the first overspill from the bevel using a first high-angle ion beam during a cleanup etch.