The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Aug. 24, 2018
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Takuma Fuyuki, Osaka, JP;

Tomohiro Doi, Osaka, JP;

Takashi Go, Osaka, JP;

Takashi Ishizuka, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 31/109 (2006.01); H01L 31/0304 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 31/0304 (2013.01); H01L 31/03042 (2013.01); H01L 31/03046 (2013.01); H01L 31/109 (2013.01); H01L 31/1844 (2013.01);
Abstract

A semiconductor laminate includes a substrate formed of a group III-V compound semiconductor and a quantum well structure disposed on the substrate. The quantum well structure includes a second element layer formed of a group III-V compound semiconductor and containing Sb and a first element layer formed of a group III-V compound semiconductor and disposed in contact with the second element layer. In the first element layer, the thickness of a region in which the content of Sb decreases in a direction away from the substrate from 80% of the maximum content of Sb in the second element layer to 6% of the maximum content is from 0.5 nm to 3.0 nm inclusive.


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