The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Oct. 02, 2019
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Board of Regents, the University of Texas System, Austin, TX (US);
Wei-E Wang, Austin, TX (US);
Mark S. Rodder, Dallas, TX (US);
Robert M. Wallace, Garland, TX (US);
Xiaoye Qin, Richardson, TX (US);
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Board of Regents, The University of Texas System, Gyeonggi-do, KR;
Abstract
A metal oxide semiconductor field effect transistor (MOSFET) includes a substrate having a source region, a drain region, and a channel region between the source region and the drain region, the substrate having an epitaxial III-V material that includes three elements thereon, a source electrode over the source region, a drain electrode over the drain region, and a crystalline oxide layer including an oxide formed on the epitaxial III-V material in the channel region, the epitaxial III-V material including three elements.