The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Jul. 03, 2019
Chongqing Boe Optoelectronics Technology Co., Ltd., Chongqing, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Hongru Zhou, Beijing, CN;
Kai Wang, Beijing, CN;
Kunkun Gao, Beijing, CN;
Xiaonan Dong, Beijing, CN;
Zhaojun Wang, Beijing, CN;
CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Chongqing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
There is provided a thin film transistor including: a substrate; a gate electrode and a first electrode in a single layer on the substrate; an active layer above the first electrode, an orthographic projection of the active layer on the substrate at least partially covers an orthographic projection of the first electrode on the substrate; a first insulation layer covering the gate electrode, the first electrode, the active layer, a portion of the substrate exposed between the gate electrode and the active layer, and another portion of the substrate exposed between the gate electrode and the first electrode; and a second electrode above the first insulation layer, an orthographic projection of the second electrode on the substrate at least partially covers the orthographic projection of the active layer on the substrate, and the second electrode is connected to the active layer through a via-hole in the first insulation layer.