The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Nov. 04, 2019
Applicant:

Electronics and Telecommunications Research Institute, Daejeon, KR;

Inventors:

Himchan Oh, Sejong-si, KR;

Sun Jin Yun, Daejeon, KR;

Jeong Ik Lee, Daejeon, KR;

Chi-Sun Hwang, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/786 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/66742 (2013.01);
Abstract

Provided is a thin film transistor. The thin film transistor includes a substrate, a channel part extending on the substrate in a first direction parallel to an upper surface of the substrate, source/drain electrodes connected to both ends of the channel part in the first direction, and a gate electrode spaced apart from the channel part in a second direction intersecting the first direction and parallel to the upper surface of the substrate. Each of the channel part, the source/drain electrodes, and the gate electrode is provided as a single layer.


Find Patent Forward Citations

Loading…