The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Feb. 06, 2020
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Yuji Ishii, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/76 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 21/761 (2006.01); H01L 21/762 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/761 (2013.01); H01L 21/76224 (2013.01); H01L 27/092 (2013.01); H01L 29/0646 (2013.01); H01L 29/0653 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/0886 (2013.01); H01L 29/1083 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/66681 (2013.01);
Abstract
The n-type body extension region BER is separated from the nburied region BL by the p-type impurity region PIR and is in contact with the p-type drift region DFT. At the end of the n-type body extension region BER closest to the pdrain region DC, the first portion FP of the n-type body extension region BER located closest to the second surface SS is located closer to the pdrain region DC than the second portion SP of the n-type body extension region BER located at the first surface FS, and is located closer to the second surface SS than the bottom surface BS of the element isolation insulating film SIS.