The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Dec. 14, 2018
Nuvoton Technology Corporation, Hsinchu, TW;
Gene Sheu, Taipei, TW;
Vivek Ningaraju, Mysore, IN;
Po-An Chen, Toufen, TW;
Shaik Mastanbasheer, Taichung, TW;
Pooja Ravindra Deshmane, Hsinchu, TW;
Monika Bharti, Hsinchu, TW;
Syed Neyaz Imam, Chandanpatti, IN;
Nuvoton Technology Corporation, Hsinchu Science Park, TW;
Abstract
A high-voltage semiconductor device includes a semiconductor substrate having a first conductivity type, and a first high-voltage well region disposed in the semiconductor substrate and having a second conductivity type that is opposite to the first conductivity type. The high-voltage semiconductor device also includes a first buried layer disposed on the first high-voltage well region and having the first conductivity type, and a second buried layer and a third buried layer disposed on the first high-voltage well region and having the second conductivity type, wherein the first buried layer is between the second buried layer and the third buried layer. The high-voltage semiconductor device further includes a source region and a drain region disposed on the first buried layer and having the second conductivity type.