The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Jul. 03, 2017
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Christoph Rupprich, Maxhütte-Haidhof, DE;

Andreas Rudolph, Regensburg, DE;

Hubert Halbritter, Dietfurt, DE;

Assignee:

OSRAM OLED GMBH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/24 (2010.01); H01L 33/30 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 27/15 (2013.01); H01L 33/0062 (2013.01); H01L 33/0093 (2020.05); H01L 33/24 (2013.01); H01L 33/30 (2013.01); H01L 33/62 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A luminescence diode and a method for producing a luminescence diode are disclosed. In an embodiment a luminescence diode includes a carrier substrate, a first semiconductor layer sequence including a first active layer suitable for emitting radiation having a first dominant wavelength λand a second semiconductor layer sequence including a second active layer suitable for emitting radiation having a second dominant wavelength λ, wherein the first semiconductor layer sequence and the second semiconductor layer sequence are arranged side by side on the carrier substrate, and wherein the first dominant wavelength λof the first active layer and the second dominant wavelength λof the second active layer are different from each other.


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