The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Jul. 12, 2017
Sakai Display Products Corporation, Sakai, JP;
SAKAI DISPLAY PRODUCTS CORPORATION, Sakai, JP;
Abstract
A semiconductor device includes a thin film transistorincluding: a semiconductor layerprovided on a gate electrodewith a gate insulating layertherebetween, wherein the semiconductor layer includes a first region Rs, a second region Rd, and a source-drain interval region RG that is located between the first region and the second region and overlaps with the gate electrode as seem from a direction normal to a substrate; a protection layerarranged on the semiconductor layer; a first contact layer Cs in contact with the first region and a second contact layer Cd in contact with the second region; a source electrode; and a drain electrode, wherein: the semiconductor layerincludes a crystalline silicon region, and at least a portion of the crystalline silicon regionis located in the source-drain interval region RG; and at least one openingis provided that runs through the protection layerand the semiconductor layerand reaches the gate insulating layer, wherein the at least one openingis located in the source-drain interval region RG as seen from the direction normal to the substrate.