The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Apr. 26, 2019
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Wei Song, Beijing, CN;
Ce Zhao, Beijing, CN;
Bin Zhou, Beijing, CN;
Dongfang Wang, Beijing, CN;
Yuankui Ding, Beijing, CN;
Jun Liu, Beijing, CN;
Yingbin Hu, Beijing, CN;
Wei Li, Beijing, CN;
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., Hefei, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
A thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device are provided, the method of fabricating a thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the active layer; and processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, the metal oxide layer covering the source electrode, the drain electrode, and the active layer, the source electrode and the drain electrode being spaced apart and insulated from each other by the metal oxide layer.