The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
May. 15, 2018
Applicant:
Screen Holdings Co., Ltd., Kyoto, JP;
Inventors:
Assignee:
SCREEN HOLDINGS CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01L 21/324 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); H01L 21/324 (2013.01); H01L 21/67017 (2013.01); H01L 21/67115 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01); H01L 21/67288 (2013.01); H01L 21/6875 (2013.01); H01L 21/68707 (2013.01);
Abstract
A first mass flow controller is provided in an inert gas pipe for feeding nitrogen gas. A second mass flow controller is provided in a reactive gas pipe for feeding ammonia. A joint pipe communicatively connects a joint portion of the inert gas pipe and the reactive gas pipe to a chamber for treating a semiconductor wafer. The joint pipe is provided with a mass flowmeter. A detector detects gas leakage by comparing a total value of flow rates of nitrogen controlled by the first mass flow controller and of ammonia controlled by the second mass flow controller with a measurement value of a flow rate of a treatment gas, obtained by the mass flowmeter.