The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Apr. 18, 2019
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Hermann Gruber, Woerth a. D., DE;
Joerg Busch, Regensburg, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 21/762 (2013.01); H01L 23/49579 (2013.01); H01L 23/5329 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 2224/325 (2013.01);
Abstract
A method includes producing a semiconductor arrangement having a semiconductor layer, a first insulation layer arranged on the semiconductor layer and facing a first surface of the semiconductor arrangement, and an insulating via extending in a vertical direction through the semiconductor layer as far as the first insulation layer, the insulating via surrounding a region of the semiconductor layer in a ring-shaped fashion. The method further includes permanently securing a first carrier to the first surface of the semiconductor arrangement.