The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
May. 01, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Xuebin Li, Sunnyvale, CA (US);
Errol Antonio C. Sanchez, Tracy, CA (US);
Patricia M. Liu, Saratoga, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H01L 21/67213 (2013.01); H01L 21/67739 (2013.01); H01L 21/76876 (2013.01);
Abstract
Embodiments disclosed herein are directed to forming MOSFET devices. In particular, one or more pre-silicide treatments are performed on a substrate prior to the deposition of the metal-silicide layer to improve the density and performance of the metal-silicide layer in the MOSFETs. The metal-silicide formation formed with the pre-silicide treatment(s) can occur before or after the formation of metal gates during MOSFET fabrication.