The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Aug. 06, 2019
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Seon-Haeng Lee, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28176 (2013.01); H01L 21/28035 (2013.01); H01L 21/823857 (2013.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/4983 (2013.01); H01L 29/66568 (2013.01); H01L 29/7856 (2013.01);
Abstract
A method for fabricating a semiconductor device includes: forming a gate structure including a source side and a drain side over a substrate, wherein a dielectric material and a columnar crystal grain material are stacked over the substrate; doping a chemical species on the drain side of the gate structure; and exposing the gate structure doped with the chemical species to a re-growth process in order to thicken the dielectric material on the drain side of the gate structure.