The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Jul. 06, 2017
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); C23C 14/34 (2006.01); C23C 14/08 (2006.01); B28B 11/24 (2006.01); B28B 1/00 (2006.01); C04B 35/01 (2006.01); C04B 35/453 (2006.01); C04B 35/58 (2006.01); H01L 29/423 (2006.01); H01L 29/24 (2006.01); G02F 1/1368 (2006.01); G02F 1/1335 (2006.01); G02F 1/1333 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3429 (2013.01); B28B 1/008 (2013.01); B28B 11/24 (2013.01); C04B 35/01 (2013.01); C04B 35/453 (2013.01); C04B 35/58 (2013.01); C23C 14/086 (2013.01); C23C 14/3414 (2013.01); H01J 37/3426 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/42384 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); C04B 2235/3205 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3239 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3256 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3279 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3287 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/3409 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/3852 (2013.01); C04B 2235/72 (2013.01); C04B 2235/781 (2013.01); C04B 2235/785 (2013.01); C04B 2235/786 (2013.01); C04B 2235/80 (2013.01); G02F 1/1368 (2013.01); G02F 1/133345 (2013.01); G02F 1/133514 (2013.01); G02F 1/133553 (2013.01); G02F 2203/02 (2013.01); H01L 29/24 (2013.01);
Abstract
A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.