The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

May. 29, 2018
Applicant:

Bourns, Inc., Riverside, CA (US);

Inventors:

Zuoyi Wang, Riverside, CA (US);

Peter Shak, Riverside, CA (US);

Gordon L. Bourns, Riverside, CA (US);

Assignee:

Bourns, Inc., Riverside, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01J 9/26 (2006.01); H01J 17/18 (2012.01); H01J 17/64 (2006.01); H01J 17/16 (2012.01); H01J 5/20 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3255 (2013.01); H01J 5/20 (2013.01); H01J 9/26 (2013.01); H01J 9/265 (2013.01); H01J 17/16 (2013.01); H01J 17/183 (2013.01); H01J 17/64 (2013.01); H01J 37/32541 (2013.01); H01J 37/32559 (2013.01);
Abstract

Glass sealed gas discharge tubes. In some embodiments, a gas discharge tube (GDT) can include an insulator substrate having first and second sides and defining an opening. The GDT can further include a first electrode implemented to cover the opening on the first side of the insulator substrate, and a second electrode implemented to cover the opening on the second side of the insulator substrate. The GDT can further include a first glass seal implemented between the first electrode and the first side of the insulator substrate, and a second glass seal implemented between the second electrode and the second side of the insulator substrate, such that the first and second glass seals provide a hermetic seal for a chamber defined by the opening and the first and second electrodes.


Find Patent Forward Citations

Loading…