The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Jun. 14, 2016
Applicant:

Sony Corporation, Tokyo, JP;

Inventor:

Haruhiko Terada, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 5/14 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 5/147 (2013.01); G11C 13/003 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0059 (2013.01); G11C 13/0061 (2013.01); G11C 7/227 (2013.01); G11C 2013/0054 (2013.01); G11C 2213/15 (2013.01); G11C 2213/76 (2013.01); G11C 2213/79 (2013.01);
Abstract

Reliability of stored data is improved without increasing power consumption in a case where a threshold of a control element in a memory cell changes. In a memory including the memory cell, a reference cell, and an access control unit, the memory cell changes from a non-conduction state to a conduction state according to an applied voltage at a threshold voltage and changes to a high resistance state and a low resistance state according to the voltage applied in the conduction state. The reference cell changes from a non-conduction state to a conduction state at a reference threshold voltage according to an applied voltage. The access control unit estimates that the reference threshold voltage measured in the reference cell is the threshold voltage of the memory cell and applies a voltage to the memory cell when accessing the memory cell.


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