The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Jun. 12, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Won Ho Choi, San Jose, CA (US);

Pi-Feng Chiu, Milpitas, CA (US);

Martin Lueker-Boden, Fremont, CA (US);

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G06N 3/08 (2006.01); G06N 3/063 (2006.01); G06N 3/04 (2006.01); G11C 13/00 (2006.01); G11C 11/22 (2006.01); G06F 17/16 (2006.01); G11C 11/16 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
G11C 5/147 (2013.01); G06F 17/16 (2013.01); G06N 3/04 (2013.01); G06N 3/0635 (2013.01); G06N 3/08 (2013.01); G11C 5/063 (2013.01); G11C 11/1697 (2013.01); G11C 11/223 (2013.01); G11C 11/2297 (2013.01); G11C 13/0038 (2013.01);
Abstract

An illustrative embodiment disclosed herein is an apparatus including a non-volatile memory cell and multi-bit input circuitry that simultaneously receives a plurality of bits, receives a supply voltage, converts the plurality of bits and the supply voltage into a multiply voltage, and applies the multiply voltage to the non-volatile memory cell. The non-volatile memory cell may pass a memory cell current in response to the multiply voltage. A magnitude of the multiply voltage may represent a multiplier. The memory cell current may represent a product of the multiplier and a multiplicand stored in the non-volatile memory cell.


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