The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Jan. 29, 2019
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Enri Duqi, Milan, IT;

Lorenzo Baldo, Bareggio, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 9/00 (2006.01); G01L 19/14 (2006.01); G01L 19/00 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); G01L 19/12 (2006.01);
U.S. Cl.
CPC ...
G01L 19/141 (2013.01); B81B 7/007 (2013.01); B81B 7/0051 (2013.01); B81C 1/00182 (2013.01); G01L 9/0052 (2013.01); G01L 9/0054 (2013.01); G01L 19/0007 (2013.01); G01L 19/0084 (2013.01); G01L 19/12 (2013.01); G01L 19/145 (2013.01);
Abstract

A MEMS pressure sensor includes a monolithic body of semiconductor material having a first face and a second face and housing a first buried cavity and a second buried cavity, arranged under the first buried cavity and projecting laterally therefrom. A first sensitive region is formed between the first buried cavity and the first face at a first depth, and a second sensitive region is formed between the second buried cavity and the first face at a second depth greater than the first depth. The monolithic body also houses a first piezoresistive sensing element and a second piezoresistive sensing element, integrated in the first and second sensitive regions, respectively.


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