The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Mar. 29, 2018
Showa Denko K.k., Tokyo, JP;
Masashi Nakabayashi, Tokyo, JP;
Shoji Ushio, Tokyo, JP;
SHOWA DENKO K.K., Tokyo, JP;
Abstract
A method for evaluating the quality of a SiC single crystal by a non-destructive and simple method; and a method for producing a SiC single crystal ingot with less dislocation and high quality with good reproducibility utilizing the same. The method for evaluating the quality of a SiC single crystal body is based on the graph of a second polynomial equation obtained by differentiating a first polynomial equation, the first polynomial equation approximating the relation between a peak shift value and a position of the measurement point and the peak shift value being obtained by an X-ray rocking curve measurement. The method for producing a SiC single crystal ingot manufactures a SiC single crystal ingot by a sublimation recrystallization method using, as a seed crystal, the SiC single crystal body evaluated by the evaluation method.