The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Sep. 23, 2016
Applicant:
Lg Chem, Ltd., Seoul, KR;
Inventors:
Assignee:
LG CHEM, LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/134 (2010.01); H01M 4/62 (2006.01); H01M 4/48 (2010.01); H01M 4/38 (2006.01); H01M 4/36 (2006.01); C01B 33/023 (2006.01); H01M 10/052 (2010.01); H01M 4/583 (2010.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/134 (2013.01); C01B 33/023 (2013.01); H01M 4/366 (2013.01); H01M 4/382 (2013.01); H01M 4/386 (2013.01); H01M 4/48 (2013.01); H01M 4/483 (2013.01); H01M 4/583 (2013.01); H01M 4/625 (2013.01); H01M 10/052 (2013.01); H01M 10/0525 (2013.01); H01M 2004/027 (2013.01);
Abstract
The present specification relates to a negative electrode active material including an amorphous silicon-based composite represented by SiO(0<a<1); and a carbon coating layer distributed on a surface of the silicon-based composite, and provides a negative electrode active material in which the crystal growth of crystalline silicon in a silicon-based composite prepared by thermal reduction with a metal reducing agent is suppressed in a state where a carbon coating layer is formed, and the ratio of silicon in the composite is high, and a method of preparing the same.