The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

Jun. 05, 2019
Applicant:

Mikro Mesa Technology Co., Ltd., Apia, WS;

Inventors:

Li-Yi Chen, Tainan, TW;

Yi-Ching Lin, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 33/56 (2010.01); H01L 33/42 (2010.01); H01L 33/58 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/42 (2013.01); H01L 33/56 (2013.01); H01L 33/58 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A method of forming a conductive area at a top surface of a light-emitting diode includes: preparing a substrate having a top surface with a conductive pad thereon; bonding a light-emitting diode having first and second type semiconductor layers and an active layer to the conductive pad; forming a polymer layer on the substrate such that a difference between a distance from a first surface of the polymer layer to the top surface of the substrate and a distance from a second surface of the polymer layer to a top surface of the light-emitting diode is greater than a distance from an interface between a second type semiconductor layer and an active layer to the top surface of the substrate; and etching the polymer layer till the second type semiconductor layer to expose the top surface of the light-emitting diode from the polymer layer.


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