The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
May. 24, 2017
Applicant:
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Inventor:
Andreas Rückerl, Konzell, DE;
Assignee:
OSRAM OLED GmbH, Regensburg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/44 (2010.01); H01L 51/52 (2006.01); H01L 51/56 (2006.01); H01S 5/028 (2006.01); H01L 33/56 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); H01L 33/0095 (2013.01); H01L 33/56 (2013.01); H01L 51/5253 (2013.01); H01L 51/56 (2013.01); H01S 5/0282 (2013.01); H01L 2251/558 (2013.01); H01L 2933/0025 (2013.01);
Abstract
A method of producing a radiation-emitting component includes: A) providing a dielectric layer that degrades against environmental influences; B) applying a first protective layer to the dielectric layer by an atomic layer deposition method, wherein the first protective layer includes elemental Si or in a compound; and C) applying a second protective layer to the first protective layer, the second protective layer including elemental Si, wherein a layer thickness of the first protective layer is less than or equal to 1 nm so that the first protective layer reduces or prevents a degradation of the dielectric layer.