The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

Dec. 24, 2018
Applicant:

Suzhou Lekin Semiconductor Co., Ltd., Taicang, CN;

Inventors:

Hyun Ju Kim, Seoul, KR;

Hyung Jo Park, Seoul, KR;

Hwan Kyo Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/10 (2010.01); H01L 33/20 (2010.01); H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 33/36 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/08 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 24/05 (2013.01); H01L 33/0093 (2020.05); H01L 33/08 (2013.01); H01L 33/20 (2013.01); H01L 33/36 (2013.01); H01L 33/382 (2013.01); H01L 33/387 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01L 2924/12041 (2013.01); H01L 2933/0066 (2013.01);
Abstract

Exemplary embodiments provide a semiconductor device including: a semiconductor structure which includes a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer disposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer, wherein the semiconductor structure has a first recess passing through the second-conductive-type semiconductor layer, the active layer and a first portion of the first-conductive-type semiconductor layer; and a plurality of second recesses passing through the second-conductive-type semiconductor layer, the active layer and a second portion of the first-conductive-type semiconductor layer, wherein the first recess is disposed along an outer surface of the semiconductor structure, wherein the plurality of second recesses are surrounded by the first recess.


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