The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Oct. 25, 2016
Solaround Ltd., Jerusalem, IL;
Naftali Paul Eisenberg, Jerusalem, IL;
Lev Kreinin, Bnei-Brak, IL;
SolAround Ltd., Jerusalem, IL;
Abstract
A method of producing a bifacial photovoltaic cell is disclosed herein, the method comprising: a) forming an n-dopant-containing layer on a first surface of a semiconductor substrate; b) forming a boron-containing layer on a second surface of the substrate by sputtering boron and/or by boron ion implantation; and c) effecting diffusion of the n-dopant and boron into the substrate, to dope the first surface with the n-dopant and the second surface with the boron. Further disclosed herein are bifacial photovoltaic cells, as well as photovoltaic modules, power plants and electric devices comprising said photovoltaic cells, comprising a semiconductor substrate, an nlayer on a first surface thereof and a boron-containing player on a second surface thereof, wherein a variability of boron concentration in the player is no more than 5%.