The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Jun. 02, 2020
Applicant:
Hewlett Packard Enterprise Development Lp, Houston, TX (US);
Inventors:
Zhihong Huang, Palo Alto, CA (US);
Raymond G. Beausoleil, Seattle, WA (US);
Assignee:
Hewlett Packard Enterprise Development LP, Houston, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H01L 31/107 (2006.01); H01L 31/18 (2006.01); H01L 31/109 (2006.01); H01L 31/0232 (2014.01); H01L 31/028 (2006.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 31/109 (2013.01); G02B 6/12 (2013.01); G02B 6/12004 (2013.01); H01L 31/028 (2013.01); H01L 31/02327 (2013.01); H01L 31/105 (2013.01); H01L 31/1075 (2013.01); H01L 31/1804 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12123 (2013.01);
Abstract
An example device includes a doped absorption region to receive optical energy and generate free electrons from the received optical energy. The example device also includes a doped charge region to increase an electric field. The example device also includes an intrinsic multiplication region to generate additional free electrons from impact ionization of the generated free electrons. The example device includes a doped contact region to conduct the free electrons and the additional free electrons.