The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Aug. 29, 2018
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventor:
Nobuki Kanrei, Yokohama, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/792 (2006.01); H01L 27/11568 (2017.01); H01L 27/11582 (2017.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 27/11568 (2013.01); H01L 27/11582 (2013.01); H01L 29/24 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/7869 (2013.01); H01L 29/78642 (2013.01); H01L 29/7926 (2013.01);
Abstract
According to one embodiment, the oxide semiconductor layer contains at least one of indium (In) and tin (Sn). The insulating film is provided between the control electrode and the oxide semiconductor layer, and contains silicon oxide. The metal oxide film is provided between the insulating film and the oxide semiconductor layer, and contacts the insulating film and the oxide semiconductor layer. The metal oxide film contains at least one selected from a group consisting of gallium (Ga), tungsten (W), germanium (Ge), aluminum (Al), molybdenum (Mo), and titanium (Ti).