The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Sep. 18, 2018
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Shunpei Yamazaki, Tokyo, JP;
Shinpei Matsuda, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
The semiconductor device includes a first insulating layer; a first oxide semiconductor; a first insulator containing indium, an element M (M is gallium, aluminum, titanium, yttrium, or tin), and zinc; a second oxide semiconductor; a source electrode layer; a drain electrode layer; a second insulator containing indium, the element M, and zinc; a gate insulating layer; and a gate electrode layer. The first and second oxide semiconductors each include a region with c-axis alignment. In the first and second oxide semiconductors, the number of indium atoms divided by sum of numbers of the indium atoms, element M atoms, and zinc atoms is ⅓ or more. In the first insulator, the number of zinc atoms divided by sum of the numbers of indium atoms, element M atoms, and zinc atoms is ⅓ or less.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile