The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Jul. 13, 2018
Applicant:
Cree, Inc., Durham, NC (US);
Inventor:
Sei-Hyung Ryu, Cary, NC (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/80 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7803 (2013.01); H01L 29/0607 (2013.01); H01L 29/0688 (2013.01); H01L 29/0696 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7802 (2013.01); H01L 29/80 (2013.01);
Abstract
A metal-oxide-semiconductor field-effect transistor includes a wide bandgap substrate, a wide bandgap drift layer over the substrate, a number of junction implants in the drift layer, and a JFET region between the junction implants. The JFET region is defined by a JFET gap, which is the distance between adjacent ones of the junction implants. The JFET gap is not uniform throughout the MOSFET device. The JFET region is separated into a first JFET sub-region and a second JFET sub-region, such that a doping concentration in the first JFET sub-region is different from a doping concentration in the second JFET sub-region.