The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Apr. 26, 2018
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/45 (2006.01); H01L 21/027 (2006.01); H01L 21/44 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02614 (2013.01); H01L 29/45 (2013.01); H01L 29/7869 (2013.01); H01L 21/0272 (2013.01); H01L 21/0331 (2013.01); H01L 21/44 (2013.01);
Abstract
A thin film transistor is provided and includes an active layer, a source electrode, a drain electrode, a gate electrode and a gate electrode insulating layer, the active layer includes a source electrode region, a drain electrode region and a channel region, the source electrode region and the drain electrode region include a first metal material, and the channel region includes a semiconductor material made from oxidation of the first metal material.