The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Oct. 11, 2018
Abb Power Grids Switzerland Ag, Baden, CH;
Luca De-Michielis, Aarau, CH;
Chiara Corvasce, Bergdietikon, CH;
ABB POWER GRIDS SWITZERLAND AG, Baden, CH;
Abstract
An insulated gate power semiconductor device includes an (n-) doped drift layer between an emitter side and a collector side. A p doped protection pillow covers a trench bottom of a trench gate electrode. An n doped enhancement layer having a maximum enhancement layer doping concentration in an enhancement layer depth separates the base layer from the drift layer. An n doped plasma enhancement layer having a maximum plasma enhancement layer doping concentration covers an edge region between the protection pillow and the trench gate electrode. The N doping concentration decreases from the maximum enhancement layer doping concentration towards the plasma enhancement layer and the N doping concentration decreases from the maximum plasma enhancement layer doping concentration towards the enhancement layer such that the N doping concentration has a local doping concentration minimum between the enhancement layer and the plasma enhancement layer.