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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11075263 B1

PDFFull Text
Date of Patent:
Jul. 27, 2021

Filed:

Jan. 08, 2019

Semiconductor device, and method for manufacturing semiconductor device

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Katsuhisa Nagao, Kyoto, JP;

Assignee:

ROHM CO, , LTD., Kyoto, JP;

Attorney:

Hamre, Schumann. Mueller & Larson, P.C.

Primary Examiner:

Moazzam Hossain

Assistant Examiner:

Hajar Kolahdouzan

Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/47 (2006.01); H01L 29/16 (2006.01); H01L 21/78 (2006.01); H01L 21/66 (2006.01); G01R 31/12 (2020.01); H01L 21/761 (2006.01); G01R 31/26 (2020.01);
U.S. Cl.
CPC ...
H01L 29/0623 (2013.01); G01R 31/129 (2013.01); H01L 21/761 (2013.01); H01L 21/78 (2013.01); H01L 22/14 (2013.01); H01L 29/0619 (2013.01); H01L 29/0692 (2013.01); H01L 29/0696 (2013.01); H01L 29/1608 (2013.01); H01L 29/408 (2013.01); H01L 29/47 (2013.01); H01L 29/78 (2013.01); H01L 29/7811 (2013.01); H01L 29/872 (2013.01); G01R 31/2648 (2013.01); H01L 2224/0603 (2013.01);
Abstract

[Object] To provide a semiconductor device capable of improving a discharge starting voltage when measuring electric characteristics, and widening a pad area of a surface electrode or increasing the number of semiconductor devices (number of chips) to be obtained from one wafer, and a method for manufacturing the same. [Solution Means] A semiconductor deviceincludes an n-type SiC layerhaving a first surfaceA, a second surfaceB, and end facesC, a p-type voltage relaxing layerformed in the SiC layerso as to be exposed to the end portion of the first surfaceA of the SiC layer, an insulating layerformed on the SiC layerso as to cover the voltage relaxing layer, and an anode electrodethat is connected to the first surfaceA of the SiC layerthrough the insulating layerand has a pad areaselectively exposed.

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